HAL + 0/54 examples
SourceVu will show references to FLASH_EraseInitTypeDef from the following samples and libraries:
Examples
STM32F413H-Discovery
Demonstrations
Applications
USB_Device
STM32446E-Nucleo
Applications
EEPROM
STM32446E_EVAL
Applications
EEPROM
IAP
USB_Device
USB_Host
Examples
FLASH
STM32469I-Discovery
Applications
EEPROM
USB_Device
USB_Host
FileX
FX_IAP
Examples
FLASH
STM32469I_EVAL
Applications
EEPROM
IAP
USB_Device
Examples
FLASH
STM324x9I_EVAL
Applications
EEPROM
IAP
LwIP
USB_Device
USB_Host
Examples
FLASH
STM324xG_EVAL
Applications
EEPROM
IAP
LwIP
USB_Device
USB_Host
Examples
FLASH
STM32F4-Discovery
Applications
EEPROM
Examples
FLASH
STM32F401-Discovery
Applications
EEPROM
Examples
FLASH
STM32F401RE-Nucleo
Applications
EEPROM
STM32F410xx-Nucleo
Applications
EEPROM
STM32F411E-Discovery
Applications
EEPROM
Examples
FLASH
STM32F411RE-Nucleo
Applications
EEPROM
STM32F412G-Discovery
Applications
EEPROM
STM32F412ZG-Nucleo
Applications
EEPROM
Examples
FLASH
STM32F413ZH-Nucleo
Applications
EEPROM
USB_Device
Examples
FLASH
STM32F429I-Discovery
Applications
EEPROM
USB_Host
Examples
FLASH
STM32F429ZI-Nucleo
Applications
EEPROM
USBX
USB_Device
Examples
FLASH
STM32F446ZE-Nucleo
Applications
EEPROM
USB_Device
Examples
FLASH
 
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SummarySyntaxRelatedReferences

Fields

Field
Declared as
Description
uint32_t
Mass erase or sector Erase. This parameter can be a value of FLASHEx_Type_Erase.
uint32_t
Select banks to erase when Mass erase is enabled. This parameter must be a value of FLASHEx_Banks.
uint32_t
Initial FLASH sector to erase when Mass erase is disabled This parameter must be a value of FLASHEx_Sectors.
uint32_t
Number of sectors to be erased. This parameter must be a value between 1 and (max number of sectors - value of Initial sector).
uint32_t
The device voltage range which defines the erase parallelism This parameter must be a value of FLASHEx_Voltage_Range.

References

from examples